BCD Microelectronics
Hazelhurst
13 Chequers Road
Basingstoke
Hampshire
RG21 7PU

T: +44(0)1256  818111
F: +44(0)1256  819111

info@bcdmicro.co.uk

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IPDiA was founded in 2009 as a spin-out from NXP Caen. The creation of IPDiA is the result of more than 10 years of Research and Development carried out in large international groups - Philips & NXP - which led to the invention of innovative 3D technologies to integrate Passive Devices.

 

IPDiA's primary objective is to focus on two main axis: Integrated Devices for high brightness LEDs and Integrated Passive Devices for new markets such as medical, industrial, aerospace and defence.

 

IPDiA's technological lead in components for lighting, LEDs and integrated passive devices will enable the company to capitalize on this know-how acquired over the last few years and which earned IPDiA its position as a major player on the world market.

 

Their Vision
IPDiA’s vision is a world where miniature and performing technological objects will contribute to quality of life and wellness of the people and to sustainable management of energy resources.

Their Mission
IPDiA’s mission is to propose to their customers and to end users solutions to miniaturize their applications whilst keeping a very high standard of performance, both on the technological and the economical aspects. IPDiA will focus its efforts on the particular field of Integrated Passive Devices, its core competence.

Integrated Protection Devices

Specifically designed for HB LEDs, IPDiA ESD protection devices offer the best performance / size ratio, thanks to IPDiA’s proven skill in ESD technology. IPDiA’s Silicon devices integrate back-to-back TVS (Transient Voltage Suppression) diodes using their unique IPDiA PICS technology for maximum miniaturization.

IPDiA produces Silicon and Ceramic submounts, that can be used as an interposer between the HB LED die and the packaging leadframe, as well as low profile and very compact ESD silicon dies to be soldered on any submount close to the HB LED die. PDiA HB LED protection diodes comply with international protection standards: MIL-STD 883, IEC 61000-4-2, JEDEC JESD22 and IEC 61000-4-5.

Thanks to IPDiA’s Design Engineering capabilities, any custom ESD protection device can be designed to suit your application needs, such as a multi-LED module with integrated thermal and lighting sensors.

3D Silicon Capacitors

IPDiA developed a unique technology to integrate a wide range of capacitor values on silicon. IPDiA Silicon Capacitors offer unprecedented performance and considerably ease system integration through miniaturization. More than 1 billion consumer devices already benefit from this groundbreaking technology, thus proving its maturity and reliability.

IPDiA High Density Capacitors can be used throughout a wide range of applications covering such diverse functions as power decoupling, signal coupling, pump charging, DC/DC power conversion, etc. Silicon capacitors are probably the best choice in capacitors for all demanding applications.  (continued in right-hand column ...)

Thanks to the unique IPDiA Silicon capacitor technology, many of the problems encountered by application designers can be solved.

RF Integrated Passive Devices

IPDiA has developed a line of Integrated Passive Devices that operate over a band from DC to 100 GHz, covering mobile communication (GSM, WCDMA, LTE) as well as UWB, WLAN (WiFi™) and Radar requirements.

Thanks to PICS, IPDiA's Integrated Passive Device technology, a wide variety of passive devices, such as baluns, couplers, splitters, filters and diplexers are integrated on a silicon substrate.

This technology can save up to 80% of the printed circuit board area currently required for discrete SMD solutions. In addition, significant cost reductions and performance improvements can be achieved by replacing external SMD components by customized IPD dies.

Customised Products

IPDiA offers turnkey solutions, from design to manufacture of custom dies that match your application perfectly.

The unique 3D silicon passive technology is a highly efficient way of integrating tens or even hundreds of passive components such as resistors, capacitors, inductors and Zener diodes in a single silicon die.

Silicon Passive die can be designed for any specific application such as:

 

In addition, significant cost reductions and performance improvements can be achieved by replacing external SMD components by customized IPD dies.

BCD are very proud to be representing IPDiA in the UK and Ireland and can offer full technical design support through to delivery anywhere in the world, whether it be direct from IPDiA or through one of their many Distribution Partners worldwide.

Putting your passive components onto one small piece of silicon reduces your form factor, simplifies your layout, increases your reliability and can reduce your overall cost of ownership.

In addition, Silicon Capacitors and Resistors offer supreme performance advantages unobtainable with standard discrete products.

With higher stability (temperature, voltage, ageing), IPDIA’s “PICS” passive integration technology is a highly efficient way to integrate passive components (10s to 100s) such as resistors, capacitors, inductors and Zener Diodes in a single Silicon die.

 

 

IPDiA website

FEATURED
PRODUCT

 

The IPDiA ASPICS320 has been specifically designed to complement SEMTECH’s SX1211 ISM Transceiver (Tx) IC.

The ASPICS320 integrates the complex external Passive Devices into one very small IC.

It has passive integration of the VCO tank, loop filter, matching network, RF rejection and decoupling on single Silicon die and the replacement of 13 key components (including the saw function).

The ASPIC320 exhibits improved performances (in terns of output power and sensitivity) in a small size, with excellent symmetry for the VCO tank, an optimum loop bandwidth for the loop filter, a high matching network with a high filter rejection for the RFIO and efficient decoupling.

Additional features:
* Cost reduction
* Compatible with current
   packaging
* Miniaturisation - 2.05mm
   x 5.5mm
* Enhanced performance
* High reliability by using
   Silicon Passive
   technology
* Operating temperature
   range of -40°C to
   +150°C

No complex RF Layout as a complete reference design is always provided.

The platform PCB layout features:

* Small BOM (just seven
   components)
* Very compact ref design
   (7.5mm x 12mm)
* Standard PCB
   technology (2 layers,
   1.6mm, standard vias
   and clearance)
* Performance quasi
   insensitive to dielectric
   thickness and optimum
   RF interconnections

For more information on the ASPICS320, please call BCD on 01256 818111, email us by pressing here or fill in our Contact Form.

You can also request a sample by filling in our Request Samples Form.